| Abstract |
2D and layered semiconductors are considered as promising electronic materials, particularly for applications that require high carrier mobility and efficient field-effect switching combined with mechanical flexibility. To date, however, the highest mobility has been realized primarily at low carrier concentration. Here, it is shown that few-layer/multilayer SnSe2 gated by a solution top gate combines very high room-temperature electron mobility (up to 800 cm2 V−1s−1), along with large on-off current ratios (>105) and a subthreshold swing below the thermodynamic limit (50 mV per decade) in field-effect devices, at exceptionally large sheet carrier concentrations of ≈1013 cm−2. Observed mobility enhancements upon partial depletion of the channel point to near-surface defects or impurities as the mobility-limiting scattering centers. Under illumination, the resulting gap states give rise to gate-controlled switching between positive and negative photoconductance. The results qualify SnSe2 as a promising layered semiconductor for flexible and wearable electronics, as well as for the realization of advanced approaches to photodetection. |
| Authors |
Yuan Huang  , Eli Sutter , B. A. Parkinson  , Peter Sutter
|
| Journal Info |
Wiley | Advanced Electronic Materials
|
| Publication Date |
11/18/2024 |
| ISSN |
2199-160X |
Type |
article |
| Open Access |
gold
|
| DOI |
https://doi.org/10.1002/aelm.202400691 |
| Keywords |
Electron Mobility (Score: 0.7571314) , Carrier scattering (Score: 0.49452826)
|
