| Abstract |
Utilizing pulsed laser deposition, a film of EuO1–x was deposited onto a Si(001) substrate with MgO buffer and compared to the same heterostructure with an additional BaTi2O5 thin film on top of the EuO1–x surface. X-ray diffraction (XRD) indicates the films crystallize into a preferred EuO(111) orientation; it also reveals the clear presence of EuSi2, which suggests Si or Eu diffuses across the MgO buffer layer. EuO1–x films exhibit a ferromagnetic (FM) signature and temperature-dependent exchange bias, indicated by MOKE measurements, suggesting the presence of a magnetic order well above the EuO Curie temperature with possible origins in charge carrier density near the interface. In comparison, an antiferromagnetic character persists well above the EuO Curie temperature of 69 K and the enhanced Curie temperature of 150 K for BaTi2O5 films grown on the EuO1–x films. The antiferromagnetic behavior is not seen in thicker EuO1–x thin films when integrated with other ferroelectric (FE) phases of the BaO–TiO2 system, suggesting an origin in the perturbed charge population at the BaTi2O5/EuO1–x interface. |
| Authors |
Syed Qamar Abbas Shah  , Muhammet Annaorazov , Gaurab Rimal  , Jian Wang , Mario F. Borunda , Jinke Tang , Andrew J. Yost
|
| Journal Info |
American Chemical Society | ACS Applied Materials & Interfaces , vol: 15
, iss: 7
, pages: 10141 - 10149
|
| Publication Date |
2/12/2023 |
| ISSN |
1944-8244 |
Type |
article |
| Open Access |
green
|
| DOI |
https://doi.org/10.1021/acsami.2c18842 |
| Keywords |
Metal-Insulator Transition (Score: 0.486547)
|
