| Abstract |
Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI3. We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI3, depending on the polarity and amplitude of the current. We propose a mechanism involving nonequilibrium spin accumulation in the graphene electrodes in contact with the CrI3 layers. We further demonstrate tunneling current-tunable stochastic switching between multiple spin states of the CrI3 tunnel devices, which goes beyond conventional bi-stable stochastic magnetic tunnel junctions and has not been documented in two-dimensional magnets. Our findings not only address the existing knowledge gap concerning the influence of tunneling currents in controlling the magnetism in two-dimensional magnets, but also unlock possibilities for energy-efficient probabilistic and neuromorphic computing. |
| Authors |
Zhuangen Fu   , Piumi Samarawickrama , John Ackerman , Yanglin Zhu , Zhiqiang Mao , Kenji Watanabe , Takashi Taniguchi , Wenyong Wang , Yuri Dahnovsky , Mingzhong Wu , TeYu Chien , Jinke Tang , Allan H. MacDonald , Hua Chen , Jifa Tian
|
| Journal Info |
Nature Portfolio | Nature Communications , vol: 15
, iss: 1
|
| Publication Date |
5/1/2024 |
| ISSN |
2041-1723 |
Type |
article |
| Open Access |
gold
|
| DOI |
https://doi.org/10.1038/s41467-024-47820-5 |
| Keywords |
Two-Dimensional Materials (Score: 0.432735)
|
