| Abstract |
The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI3-based tunnel junctions. The few-layer CrI3-based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI3. We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI3 via gating-induced Jahn-Teller distortion. Our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies. |
| Authors |
Zhuangen Fu   , Piumi Samarawickrama , Yanglin Zhu , Zhiqiang Mao , Wenyong Wang , Kenji Watanabe , Takashi Taniguchi , Jinke Tang , John Ackerman , Jifa Tian
|
| Journal Info |
American Chemical Society | Nano Letters , vol: 23
, iss: 24
, pages: 11866 - 11873
|
| Publication Date |
12/11/2023 |
| ISSN |
1530-6984 |
Type |
article |
| Open Access |
closed
|
| DOI |
https://doi.org/10.1021/acs.nanolett.3c03926 |
| Keywords |
Non-Volatile Memory (Score: 0.551794)
|
